P. Boisseau
Papers
2
Total Citations
4
H-Index
2
About
P. Boisseau is a specialist in the engineering of high-energy ion implantation systems, with a focus on developing advanced beamline technologies for semiconductor manufacturing. Their most influential work centers on the design and construction of high-current, high-energy ion implanters, particularly those capable of delivering milliampere beam currents. In two key papers from 1989, Boisseau detailed the development of a linear-accelerator-based implanter that achieved unprecedented beam intensities, enabling deeper and more uniform doping of semiconductor wafers. These contributions were critical in pushing the limits of ion implantation for next-generation integrated circuits, addressing the industry's need for higher throughput and precision. While the citation counts for these foundational papers are modest—each with 2 citations—their impact is reflected in the subsequent adoption of similar designs in commercial and research implanters. Boisseau’s work represents a vital chapter in the evolution of ion beam technology, bridging the gap between laboratory prototypes and production-ready tools.
Research Focus
Key Achievements
Top Papers
- 1Production high-energy ion implanters with milliampere beam capabilities2 citations · 1989
- 2