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In-Memory Computation Using CMOS-Integrated Resistive RAM for Robotic Navigation

Jeelka Solanki, Jacob Pelton, Rocco Febbo, Maximilian Liehr, Andrew DeCandia, Karsten Beckmann, Garrett S. Rose, Nathaniel C. Cady

发表年份
2024
引用次数
2

摘要

Neuromorphic and in-memory computing (IMC) enabled by Resistive Random Access Memory (ReRAM) holds the potential to dramatically improve the energy efficiency of computation. ReRAM-based IMC facilitates an efficient hardware solution for neural networks reliant on vector matrix multiplication (VMM) and associated applications. To demonstrate these capabilities, we utilized fully CMOS-integrated ReRAM arrays to perform IMC operations for a robotic line following navigation task. In this work, we developed a custom microcontroller-based interface for receiving sensor inputs, performing VMM operations on custom fabricated and packaged ReRAM arrays, and using VMM outputs to guide the robotic demonstrator. This work demonstrates a comprehensive analysis of the impact of ReRAM resistance stochasticity on navigational accuracy, the impact of microcontroller / board design on ReRAM performance, and how careful selection of ReRAM resistance states can mitigate operational errors.

关键词

Computer scienceCMOSResistive touchscreenComputationEmbedded systemMemory refreshComputer hardwareRandom access memoryComputer architectureSemiconductor memory

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