H. Funabashi

About

H. Funabashi is a prominent researcher in the field of microelectromechanical systems (MEMS), with a specialized focus on high-performance accelerometers and tactile sensors for advanced robotics and automotive applications. His major contributions center on the development of innovative capacitive SOI (Silicon-on-Insulator) 3-axis accelerometers, most notably introducing a novel zigzag-shaped Z-electrode for fully-differential detection. This design, detailed in his most-cited paper (2011, 14 citations), enables precise motion control by significantly improving sensitivity and stability. Funabashi further advanced sensor reliability by engineering a stress reduction structure (SRS) to mitigate thermal-induced output drift, as demonstrated in his 2014 work (4 citations). He also pioneered a flipped CMOS-diaphragm capacitive tactile sensor (2015, 3 citations) designed for surface mounting on flexible, stretchable bus lines—a critical innovation for covering social robot bodies with integrated sensing. His work on chip-level warp control for SOI accelerometers (2012, 4 citations) underscores his systematic approach to overcoming fabrication challenges. Collectively, Funabashi’s research has laid essential groundwork for robust, high-accuracy MEMS sensors, directly impacting the next generation of autonomous systems and human-robot interaction technologies.

Research Focus

Key Achievements

Top Papers

1. 1
   An SOI 3-axis accelerometer with a zigzag-shaped Z-electrode for differential detection

   14 citations · 2011
2. 2
   SOI 3-axis accelerometer with a stress reduction structure

   4 citations · 2014
3. 3
   Chip-Level Warp Control of SOI 3-Axis Accelerometer with the Zigzag-Shaped Z-Electrode

   4 citations · 2012
4. 4
   Flipped CMOS-diaphragm capacitive tactile sensor surface mountable on flexible and stretchable bus line

   3 citations · 2015

Key Collaborators

Contact & Links