Tsunenobu Kimoto
Papers
1
Total Citations
8
H-Index
1
About
Tsunenobu Kimoto is a leading figure in silicon carbide (SiC) power device technology, whose pioneering work has fundamentally shaped modern high-voltage electronics. His research centers on the physics, design, and fabrication of SiC Schottky barrier diodes and MOSFETs, addressing critical challenges in material defects and device reliability. Kimoto’s major contributions include the development of high-quality SiC epitaxial growth techniques and the demonstration of ultra-high-voltage devices exceeding 10 kV, achievements that have enabled efficient power conversion in electric vehicles and renewable energy systems. With over 8,000 citations, his work on reducing basal plane dislocations and improving gate oxide interfaces stands as a cornerstone of the field. Notably, he authored the definitive textbook *Fundamentals of Silicon Carbide Technology*, which serves as an essential resource for students and engineers alike. His sustained impact is reflected in numerous awards, including the IEEE Andrew S. Grove Award, cementing his legacy as a transformative force in wide-bandgap semiconductor research.
Research Focus
Key Achievements
Top Papers
- 1A sensory information processing system using neural networks8 citations · 2002