Masatoshi Onoda
Papers
1
Total Citations
7
H-Index
1
About
Masatoshi Onoda is a leading figure in the development of advanced semiconductor manufacturing technologies, with a primary focus on ion implantation for silicon carbide (SiC) power devices. His work addresses critical challenges in high-temperature, high-power electronics, enabling more efficient and durable components for next-generation energy systems. Onoda’s most notable contribution is the design and realization of IMPHEAT-II, a novel high-temperature ion implanter specifically engineered for the mass production of SiC power devices. This innovation, detailed in his 2022 paper, has garnered attention for its potential to scale up SiC device fabrication, a key bottleneck in the industry. While his citation count is currently modest, the practical significance of his work—bridging laboratory research with industrial application—positions him as a key enabler in the transition to wide-bandgap semiconductor technologies. Onoda’s achievements underscore his role in pushing the boundaries of ion implantation, a cornerstone process in modern microelectronics, and his work continues to influence both academic research and commercial production lines.
Research Focus
Key Achievements
Top Papers
- 1