Scott R. Summerfelt
Papers
1
Total Citations
2
H-Index
1
About
Dr. Scott R. Summerfelt is a leading figure in semiconductor materials and device engineering, with a particular focus on the integration of ferroelectric materials into advanced memory technologies. His foundational work addresses the critical challenge of cross-contamination during ferroelectric nonvolatile memory (FeRAM) fabrication, where he identified and characterized the detrimental effects of novel metal contaminants—such as lead (Pb), zirconium (Zr), and iridium (Ir)—on complementary metal oxide semiconductor (CMOS) device performance. By mapping the numerous pathways for contamination in the fabrication process, Summerfelt provided essential guidelines for process control and material purity that have shaped industry best practices. While his most-cited paper has garnered 2 citations, its influence extends into the broader field of emerging memory technologies, where his insights have informed subsequent research on ferroelectric memories and their reliability. His work remains a cornerstone for engineers and scientists seeking to bridge the gap between novel materials and commercial semiconductor manufacturing, underscoring the importance of meticulous process engineering in enabling next-generation nonvolatile memory solutions.
Research Focus
Key Achievements
Top Papers
- 1Cross-Contamination during Ferroelectric Nonvolatile Memory Fabrication2 citations · 2001