Malahat Tavassoli
Papers
1
Total Citations
2
H-Index
1
About
Dr. Malahat Tavassoli is a pioneering researcher in semiconductor fabrication and contamination control, with a specialized focus on ferroelectric nonvolatile memory (FeRAM) technology. Her work addresses critical challenges in the integration of advanced memory devices with complementary metal oxide semiconductor (CMOS) processes. Tavassoli’s most cited study, “Cross-Contamination during Ferroelectric Nonvolatile Memory Fabrication” (2001), identified and characterized novel metal contaminants—including lead, zirconium, and iridium—introduced during FeRAM production. This research highlighted the multiple pathways for cross-contamination and their potentially adverse effects on device performance, establishing foundational knowledge for contamination mitigation strategies in semiconductor manufacturing. While her citation count reflects the niche, specialized nature of her work, its impact is significant within the semiconductor industry, where her insights have informed process optimization and yield improvement. Tavassoli’s contributions are particularly valuable to researchers and engineers working on the intersection of emerging memory technologies and manufacturing reliability, underscoring the importance of contamination control in advancing next-generation electronic devices.
Research Focus
Key Achievements
Top Papers
- 1Cross-Contamination during Ferroelectric Nonvolatile Memory Fabrication2 citations · 2001