Yonghai Li

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About

Yonghai Li is a pioneering researcher at the forefront of triboelectric-gated transistors, a cutting-edge field bridging nanoenergy and flexible electronics. His work centers on harnessing triboelectric potentials—electrical charges generated by mechanical motion—to control transistor behavior, enabling a new class of self-powered, mechanically responsive devices. In his highly cited 2021 paper (53 citations), Li introduced a triboelectric potential tuned dual-gate IGZO transistor, creating a versatile sensory platform that integrates touch, pressure, and environmental sensing into a single device. He further advanced the field with a 2022 study (28 citations) demonstrating a high-performance organic transistor array powered entirely by triboelectric potentials. These innovations are foundational for applications ranging from mechanical behavior controlled logic circuits and multifunctional sensors to artificial sensory neurons. By establishing both high-performance device architectures and key figure-of-merit standards, Li is driving the rapid evolution of this technology, positioning it as a cornerstone for next-generation interactive electronics and intelligent systems.