Yasumitsu Murai

Renesas Electronics (Japan)

Papers

1

Total Citations

10

H-Index

1

About

Yasumitsu Murai is a leading figure in advanced semiconductor memory design, with a primary focus on embedded flash technologies for high-performance microcontrollers (MCUs). His key research areas include SG-MONOS (Split-Gate Metal-Oxide-Nitride-Oxide-Silicon) flash memory, high-speed random read operations, and innovative sense amplifier circuits. Murai’s most notable contribution is his work on a 40-nm embedded SG-MONOS Flash macro, which achieved a groundbreaking 200-MHz random read operation and a density of 7.91 Mb/mm². This was made possible through a charge-assisted offset cancellation sense amplifier, a design that significantly enhances read speed and reliability. His work directly addresses the growing demands of AI-driven IoT endpoint devices, bridging the gap between high-end MCU performance and low-end processor efficiency. With 10 citations for this flagship paper, Murai’s research is recognized for enabling higher intelligence and lower cost in crossover applications. His achievements demonstrate a deep impact on the semiconductor industry, pushing the boundaries of embedded memory for next-generation smart devices.

Research Focus

Key Achievements

1
H-Index
1
Papers
10
Total Citations
10
Avg Citations/Paper
🏆 Most Cited Paper
A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm<sup>2</sup> Density With Charge-Assisted Offset Cancellation Sense Amplifier
10 citations · 2022
📈 Most Prolific Year: 2022 (1 Papers)
🤝 Key Collaborators: 9
🏛 Institutions: Renesas Electronics (Japan)

Top Papers

  1. 1

Key Collaborators

Contact & Links

Available for collaboration
Content generated · 13 days ago