Shuichi Okubo
Papers
1
Total Citations
19
H-Index
1
About
Shuichi Okubo is a leading researcher in the reliability and radiation tolerance of wide-bandgap power semiconductor devices, with a particular focus on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). His work addresses a critical challenge: ensuring these high-performance devices can operate safely in extreme environments, such as nuclear power plants and space, where ionizing radiation is a constant threat. Okubo’s most cited study, “Radiation Response of Negative Gate Biased SiC MOSFETs” (2019, 19 citations), made a pivotal contribution by systematically investigating how negative gate bias influences the degradation of commercial-grade prototype SiC MOSFETs under radiation. This research provided essential insights into the mechanisms of threshold voltage shifts and leakage current increases, offering practical guidelines for designing more robust power electronics. By bridging the gap between fundamental radiation physics and real-world device reliability, Okubo’s work has significant implications for the future of resilient energy conversion systems in high-radiation applications. His contributions are shaping the next generation of power electronics for critical infrastructure and aerospace technologies.
Research Focus
Key Achievements
Top Papers
- 1Radiation Response of Negative Gate Biased SiC MOSFETs19 citations · 2019