Nikita V. Polupanov
Papers
2
Total Citations
13
H-Index
2
About
Nikita V. Polupanov is a rising researcher in the field of neuromorphic and memristive devices, with a focus on transparent oxide electronics and crossbar array architectures for next-generation computing. His work centers on the fabrication and characterization of thin-film memristors, particularly using zinc oxide (ZnO) and titanium dioxide (TiO₂), to enable energy-efficient hardware for artificial intelligence and robotics. Polupanov’s most cited paper (2024, 11 citations) investigates how magnetron sputtering power influences the structural and electrical properties of nanocrystalline ZnO films, demonstrating their potential for transparent memristor structures and crossbar arrays. In a notable earlier study (2022, 2 citations), he contributed to the development of a forming-free 4×4 neuromorphic crossbar array using Ti/TiO₂/Cu memristors, which eliminates the need for an initial electroforming step—a key advancement for scalable, low-power AI hardware. His work bridges materials science and device engineering, offering practical pathways toward robust, transparent, and forming-free resistive switching devices. Polupanov’s research is particularly impactful for students and engineers exploring neuromorphic computing, as it addresses critical challenges in fabrication reproducibility and array-level integration.
Research Focus
Key Achievements
Top Papers
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