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An Oxide Schottky Junction Artificial Optoelectronic Synapse

Shuang Gao, Gang Liu, Huali Yang, Chao Hu, Qi Chen, Guodong Gong, Wuhong Xue, Xiaohui Yi, Jie Shang, Run‐Wei Li

Year
2019
Citations
478

Abstract

The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium–tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and “learning-experience” behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificial synapse suitable for the mimicry of interest-modulated human visual memories.

Keywords

Materials scienceOxideOptoelectronicsSchottky barrierSynapseGrapheneNanotechnologyNeuroscienceBiology

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