Optoelectronic Transistor Based on InSe/MoS₂ Heterostructure for Multimodal Nociceptor

摘要

The artificial nociceptor is a device that simulates the biological nociception system, which has a wide range of applications in the fields of medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, and thermal, and so on, and then convert them into neural signals for processing by the brain. Herein, a back‐gate optoelectronic transistor based on 2D InSe/MoS 2 heterostructure is demonstrated. By employing energy band alignment of the heterojunction, the device exhibits high sensitivity (10 6 ) and high responsivity (330 AW −1 ) to harmful UV irradiation, which can be exploited to emulate the key features of nociceptors, including “threshold,” “relaxation,” “no adaptation,” and “sensitization.” Moreover, the device can be operated in a two‐terminal mode, memristive characteristics are obtained through applying source–drain voltages. Then, artificial nociceptive behaviors responding to external electrical pulses have been successfully emulated. Finally, the modulation of nociceptive sensitivity can be achieved through the controlling gate bias, which fully demonstrates the potential of our device for the application of biomimetic multimodal artificial nociceptors in future neuromorphic sensory system.