Metal-oxide-semiconductor (MOS) devices

Abstract

Abstract MOS integrated circuits, particularly those of the complementary form (CMOS), are very suitable for use in high-performance electronics such as timers, battery-powered computers, robots, missiles, and space vehicles. The power consumed by the CMOS logic element is extraordinarily low compared with nMOS and bipolar circuits. In addition, the CMOS inverter employs voltage signals which can be made highly immune to noise. These features are uniquely suitable for advanced data-handling and control systems in severe, remote environments. It is unfortunate therefore that many MOS devices show strong, variable and long-lived response to total-dose radiation. In any radiation environment exceeding about one thousand rads ( 10 Gy), it is necessary to consider the effect of oxide charge trapping and interface-state generation; heavy ions and intense pulses of radiation can also cause the upset of logic states.