Hybrid CMOS-memristor 4T-NVSRAM cell for low power applications

Abstract

Introduction to Memristor and Memristive devices in VLSI design and electronics add new features to both analog and digital circuit design. Memristor finds applications in different fields like memories with a non-volatile behaviour (NVRAM-Non-Volatile Random Access Memory), neural networks, robotics to mimic biological entities, Low-power and remote sensing applications, Analog computation and circuit Applications, Crossbar Latches, and Programmable Logic and Signal Processing. The basic property of Memristors is data storage, i.e. it serves as a memory element. This paper presents a hybrid combination of CMOS (Complimentary Metal-oxide Semiconductors) and the memristor to design a non-volatile load 4-Transistor (4T) Static Random Access Memory (SRAM) cell for Low Power applications. By combining the flexibility of MOS devices and the non-volatility of Memristors, storage circuitry shows potential to realize highly power-efficient and non-volatile storage systems. Memristor is a non-volatile element that memorizes the amount of charge passed through it while storing the information in the form of resistance. Simulations demonstrate the utility and functionality of the circuitry, where the memristor is precisely modeled using CAD tools. Simulation results are performed on Cadence virtuoso tool at 45nm technology. The results show that the proposed SRAM cell has the optimized results at a resistance of 10MΩ. The proposed circuit has Static Power (4.89×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> Watts), Dynamic Power (5.09×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> Watts) and Average Power (2.79×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> Watts).