Nanoscale Electronic Nociceptor using ZnO/TiOx Bilayer Memristor on a Flexible Substrate

摘要

Nociceptive behaviors of binary zinc oxide and titanium oxide sandwiched memristor are observed on a flexible transparent substrate. The ITO/ZnO/TiO x /ITO/PEN device probes threshold behavior by applying beyond 0.9 V pulse amplitude along with an 1 ms pulse width. However, the nociceptor crossed the tolerance by applying a higher pulse width than 1 ms by maintaining the same 0.9 V pulse amplitude. The relaxation properties of the memristor‐based nociceptor are also confirmed by measuring the device after a prolonged time of more than 10 ms prior to the noxious stimulation. The allodynia and hyperalgesia behavior of the nociceptor is validated from the resistance response with different injury voltages. The low‐cost binary oxide sandwiched memristor‐based flexible nociceptor can be the best alternative for humanoid robotic applications.