Fabrication of flexible AlGaInP LED

摘要

Abstract Flexible light-emitting diodes (LEDs) are highly desired for wearable devices, flexible displays, robotics, biomedicine, etc. Traditionally, the transfer process of an ultrathin wafer of about 10–30 μ m to a flexible substrate is utilized. However, the yield is low, and it is not applicable to thick GaN LED chips with a 100 μ m sapphire substrate. In this paper, transferable LED chips utilized the mature LED manufacture technique are developed, which possesses the advantage of high yield. The flexible LED array demonstrates good electrical and optical performance.