Towards Harsh Environment Silicon Carbide Based On-Chip Antenna

摘要

This paper presents an on-chip dielectric resonator antenna (DRA) based on silicon carbide (SiC). SiC is a semiconductor material known for its large bandgap, high dielectric breakdown, and temperature-stable dielectric properties, making it well-suited for harsh environment electronics. We propose a DRA on a SiC substrate, incorporating a sapphire rectangular resonator bonded to the SiC chip. The fundamental TE111 mode is excited at 29.5 GHz within the resonator via a rectangular aperture on the SiC chip, which is fed by a coplanar waveguide (CPW). An inductive series stub at the feed is used for impedance matching. Simulation results demonstrate a high gain of 7.4 dBi with a radiation efficiency of 84%. Furthermore, we propose a custom probe station with an integrated hot plate and robotic arm for high-temperature testing of the DRA.