A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm² Density With Charge-Assisted Offset Cancellation Sense Amplifier

摘要

With the expansion of Internet of Things (IoT) by artificial intelligence (AI), there is a strong demand for higher performance, higher intelligence, and lower cost in endpoint devices for crossover area located at the boundary between high-end micro controller unit (MCU) area and low-end micro processor unit (MPU) area, such as home automation, machine vision, robotics, and so on. This article presents a 40-nm embedded split-gate MONOS (SG-MONOS) flash macro with optimized memory array architecture and charge-assisted offset cancellation sense amplifier (CAOC-SA), which achieve high-speed random read operation of 200 MHz and high density of 7.91 Mb/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> suitable for crossover devices.