Demonstration of TFTs 3D Monolithically Integrated on GaN HEMTs using Cascode Configuration with High Breakdown Voltage (>1900V)

摘要

This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high breakdown voltage capabilities exceeding 1900 V. Two device configurations, differing in a-IGZO channel thickness (30 nm / 10 nm), are fabricated and evaluated. Sample B, with a 10 nm a-IGZO channel, demonstrates superior electrical performance, including a high ON/OFF current ratio (~10^7), low subthreshold swing (SS), and a high breakdown voltage exceeding 1900 V comparable to standalone GaN power HEMTs. The results highlight the feasibility and potential of 3D integrated TFT on GaN power HEMTs, paving the way for new opportunities for the TFTs for high voltage applications.